Abstract
The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb) and dopants (Fe). An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects.
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Mun, H., Lee, K. H., Kim, S. J., Kim, J. Y., Lee, J. H., Lim, J. H., … Kim, S. W. (2015). Fe-doping effect on thermoelectric properties of p-type Bi0.48Sb1.52Te3. Materials, 8(3), 959–965. https://doi.org/10.3390/ma8030959
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