High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method

Abstract

Single crystals of MoS2 and MoSe2 were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistance under pressure was monitored in a Bridgman anvil set-up up to 6·5 GPa to identify occurrence of any structural transition. MoS2 and MoSe2 do not undergo any structural transmissions under pressure.