Both p-type and n-type MoTe2 transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe2 transistors using Au as electrode and achieve the conversion of p-type transistor to n-type by annealing it in vacuum. Temperature-dependent in situ measurements assisted by the results given by first-principle simulations indicate that n-type conductance is an intrinsic property, which is attributed to tellurium vacancies in MoTe2, while the device in air experiences a charge transfer which is caused by oxygen/water redox couple and is converted to air-stable p-type transistor. Based on p-type and n-type multi-layered MoTe2 transistors, we demonstrate a complementary inverter with gain values as high as 9 at VDD = 5 V.
CITATION STYLE
Liu, J., Wang, Y., Xiao, X., Zhang, K., Guo, N., Jia, Y., … Xiao, L. (2018). Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter. Nanoscale Research Letters, 13. https://doi.org/10.1186/s11671-018-2721-0
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