Si O x -planarized and transistor outlook-packaged oxide-confined vertical-cavity surface-emitting lasers with ring-shape geometry for high-speed (10Gb∕s) operation

Abstract

This study explores an alternative approach to fabricate the 850nm SiOx-planarized ring-shape vertical-cavity surface-emitting lasers (VCSELs) with stable lasing emission and high-speed operation. The fabricated ring-shape VCSELs have an inner oxide diameter of 9μm and an outer oxide diameter of 15μm. These devices show a threshold current of 3.65mA, a maximum light output power of 7.5mW at 25mA, and a differential resistance of 65Ω at room temperature. Furthermore, they exhibit a stable dual-mode behavior over the operation current of 25mA. Moreover, this TO-packaged 850nm VCSEL for small-signal analyses shows a maximum modulation frequency of about 8GHz, which is corresponding to a modulation-current efficiency factor of 2.47GHz∕mA1∕2. This VCSEL also shows a clear and symmetric eye-opening feature at 10.3Gbytes∕s and 18mA for back-to-back and 66m transmission tests. Based on these results, the excellent high-speed performance can be fulfilled by the SiOx-planarized and TO-packaged oxide-confined VCSELs with ring-shape geometry.