Revealing the intrinsic electronic structure and complex fermiology of YRu2Si2 using angle-resolved photoemission spectroscopy

Abstract

We performed a detailed study of the intrinsic electronic structure of YRu2Si2 employing angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT) based first-principles calculations. Electrical and magnetic measurements were conducted on well-oriented high-quality single crystals. Bulk physical measurements indicate that the compound exhibits slightly enhanced Pauli paramagnetic behavior, accompanied by electrical transport properties reminiscent of metals. Our ARPES data reveal fourfold symmetric Fermi surface with weakly dispersing bands around the N¯ point originating from Ru d orbitals. We observed the anisotropic characteristics of the band near the N¯ point, showing weak dispersion in the X¯-N¯-X¯ direction and minimal dispersion along the N¯-Γ¯-N¯ direction. The electronic band structure near the Fermi level is primarily governed by the Ru d orbital, with minor contributions from the Y d and Si p orbitals. Polarization-dependent ARPES results indicate the multiband and multiorbital band character of YRu2Si2. Due to the negligible correlation effect, the observed ARPES data are found to be in good agreement with the DFT results.