Abstract
TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications. © 2005 American Institute of Physics.
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CITATION STYLE
Chueh, Y. L., Chou, L. J., Cheng, S. L., Chen, L. J., Tsai, C. J., Hsu, C. M., & Kung, S. C. (2005). Synthesis and characterization of metallic TaSi2 nanowires. Applied Physics Letters, 87(22), 1–3. https://doi.org/10.1063/1.2132523
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