Nitrogen pair luminescence in GaAs

Abstract

We report on the first observation of different nitrogen pair complexes in GaAs. These complexes, which have been searched for since the '60s, are studied under the application of hydrostatic pressure. By carefully tuning the pressure, we make one after the other of the NNi pairs (1≤i≤10) appear in the band gap of GaAs and then become the major exciton recombination channel. We compare our results for nitrogen states in GaAs with the classical case of NNi excitons in GaP.