Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

Abstract

We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) II 3C-SiC (001) and h-InN (1-100) II 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.