Abstract
Room temperature photoluminescence at 1.6 μm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results. © 2005 American Institute of Physics.
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CITATION STYLE
Ripalda, J. M., Granados, D., González, Y., Sánchez, A. M., Molina, S. I., & García, J. M. (2005). Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb. Applied Physics Letters, 87(20), 1–3. https://doi.org/10.1063/1.2130529
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