Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density

Abstract

We fabricated SiO 2 /4H-SiC (0001) MOS capacitors with nearly-ideal capacitance-voltage characteristics, simply by the control of thermal oxidation conditions which were selected based on thermodynamic and kinetic considerations of SiC oxidation. The interface with low interface defect state density <10 11 cm -2 eV -1 for the energy range 0.1 – 0.4 eV below the conduction band of SiC was obtained by thermal oxidation at 1300 o C in a ramp-heating furnace with a short rise/fall time, followed by low temperature O 2 anneal at 800 o C.