Evaluation of Mismatch Losses due to Shunts in industrial Silicon Photovoltaic Modules

Abstract

In order to achieve higher efficiencies in photovoltaic module technology, it is important to characterize the shunts and other defects which degrade the performance of cells and modules as well as decrease their efficiency. These shunts also affect the reliability of cells and modules. It is important to understand how much fill factor and power loss is caused by the presence of shunts in the module. Shunts not only reduce the module power output, but also affect the I-V characteristics of the cell and hence the characteristics of the shunted cells are different from those of the shunt-free cells connected in the module leading to the mismatch effect. This is an interesting effect which has been systematically investigated in the present work. Moreover, the flow of increased shunt current will give rise to increased temperature in the region of shunt, which will affect the cell and hence module performance. In the present study, the distributed diode model has been extended to the module level and applied to evaluate the electrical mismatch losses and thermal mismatch losses due to shunts in industrial Silicon PV modules.