Preparation of (100)‐oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3

Abstract

Highly (100)‐oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as well as glass substrates by rf magnetron sputtering deposition at substrate temperatures ranging from 150 to 500 °C. As‐deposited LNO films are metallic; those prepared at substrate temperature ∼150–250 °C have a resistivity of 0.4–0.5 mΩ cm and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A subsequent deposition of sol‐gel derived Pb(Zr0.53Ti0.47)O3 (PZT) thin film on the LNO‐coated substrate was also found to have a significant (100)‐ and (001)‐oriented texture. The ferroelectric capacitor fabricated from these films displays a good P–E hysteresis characteristic. © 1995, American Institute of Physics. All rights reserved.