Photocarrier radiometric study of defect states in semi-insulating GaAs

Abstract

Photo-Carrier Radiometry has been applied to semi-insulating (SI) GaAs wafers. Due to the ultrafast free carrier lifetime, the conventional diffusion based PCR theory was modified to reflect defect induced carrier radiometry. Modulated and spectrally-gated defect luminescence was measured and analyzed using rate-window detection, in both temperature and frequency domain. Five defect levels were identified through multi-parameter fitting of PCR theory to the experimental data. © 2010 IOP Publishing Ltd.