Laterally overgrown GaN/InGaN Multi-quantum well heterostructures: Electrical and optical properties

Abstract

Multi-quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum-mechanical simulation of the grown heterostructures. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.