Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

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Abstract

Here we report on the growth of thin crystalline films of the metastable phase GeTe2. Direct observation by transmission electron microscopy revealed a Te-Ge-Te stacking with van der Waals gaps. Moreover, electrical and optical measurements revealed the films exhibted semiconducting properties commensurate with electronics applications. Feasibility studies in which device structures were fabricated demonstrated the potential application of GeTe2 as an electronic material.

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APA

Saito, Y., Hatayama, S., Chang, W. H., Okada, N., Irisawa, T., Uesugi, F., … Fons, P. (2023). Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film. Materials Horizons, 10(6), 2254–2261. https://doi.org/10.1039/d2mh01449a

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