9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias

Abstract

1.5 mm gate periphery AlGaN/GaN HEMTs were fabricated and tested. 9.2 W/mm (total 13.8 W) power was obtained at 10 GHz under pulsed conditions without active cooling. The pulse width was 50 μs with 5% duty cycle. This is the state-of-the-art power density demonstrated from the similar size devices. The device was based at up to 55 V drain bias. At the above pulse conditions and drain bias, the simulated maximum junction temperature was 170°C, indicating that device performance was limited by the self-heating effect.