A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials

Abstract

A general method using a biased atomic force microscopy tip that allows a qualitative, fast, and reliable determination of key electronic properties such as metallic, n-, or p-doped characteristics has been reported for the first time. This method eliminates the detrimental effect of contact in the traditional transport measurement and is much simpler than the common-electrostatic force microscopy detection method, thus providing a powerful tool for fast characterizations of nanomaterials. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.