Abstract
We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback oscillation. The fabricated SLDs produce a close-to-Gaussian shaped spectrum centered at 1210 nm with a bandwidth of 135 nm. Spectral ripple as low as 0.3 dB has been measured. © 2007, IEEE. All rights reserved.
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CITATION STYLE
Dang, G. T., Chang, W. H., Wang, D. N., Ooi, B. S., & Hwang, J. C. M. (2007). InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging. IEEE Sensors Journal, 7(2), 251–257. https://doi.org/10.1109/JSEN.2006.886884
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