Electronic properties of stacked ZrO2 films fabricated by atomic layer deposition on 4H-SiC

Abstract

The electronic properties of ZrO2/SiO2 stacked dielectric layers are reported as a function for temperature of the atomic layer deposition process. A dielectric layer has been characterized by C-V and I-V measurements of MIS structures. A strong dependence of κ value of ZrO2 layer has been observed as a function of deposition temperature T. The values within the range of κ ≈ 16-26 have been obtained. All measured stacked dielectric layers show an increase in dielectric breakdown voltage compared to simple SiO2 dielectric by average factor of 1.7 and factor of 2 (21 MV/cm) for high-κ oxides deposited at low temperature (85°C).