Proximity gettering design of silicon wafers using silicon hydride and hydrocarbon mixture molecular ion implantation technique

Abstract

We developed a novel hybrid-molecular-ion-implantation technique for proximity gettering to reduce the carbon dose. In this molecular-ion-implantation technique, a molecular ion beam with a mixture of silicon hydride and hydrocarbon-molecular-ions is used. We found that 150 nm silicon {111} extrinsic Frank-type dislocation loops in the ion-implanted region are formed by this technique after epitaxial growth. Nickel and copper gettering test results showed that the ion-implanted region can getter Ni and Cu contaminants that diffused from the wafer surface at a carbon dose lower than those in hydrocarbon-molecular-ion-implanted wafers. We determined by energy dispersive x-ray (EDX) observation that end of range defects (EOR) act as gettering sites. We speculate two types of gettering induced by this technique: the relaxation-type gettering caused by EOR defects and the segregation-type gettering caused by the high concentration of carbon around EOR defects.