Abstract
An electrodeposition method for fabrication of CuTe and Cu2Te thin films is presented. The films' growth is based on the epitaxial electrodeposition of Cu and Te alternately with different electrochemical parameter, respectively. The deposited thin films were characterized by X-ray diffraction (XRD), field emission scanning electronic microscopy (FE-SEM) with an energy dispersive X-ray (EDX) analyzer, and FTIR studies. The results suggest that the epitaxial electrodeposition is an ideal method for deposition of compound semiconductor films for photoelectric applications.
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CITATION STYLE
He, W., Zhang, H., Zhang, Y., Liu, M., Zhang, X., & Yang, F. (2015). Electrodeposition and Characterization of CuTe and Cu2Te Thin Films. Journal of Nanomaterials, 2015. https://doi.org/10.1155/2015/240525
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