Abstract
In this paper, we were able to crystallize InGaZnO 4 (IGZO) by excimer laser on SiO 2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO 2 substrate. This process is very promising in fabricating high quality IGZO thin film transistors (TFT) at low temperature without seed substrate. © 2011 The Author(s).
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CITATION STYLE
Chen, T., Wu, M. Y., Ishihara, R., Nomura, K., Kamiya, T., Hosono, H., & M Beenakker, C. I. (2011). Excimer laser crystallization of InGaZnO 4 on SiO 2 substrate. Journal of Materials Science: Materials in Electronics, 22(11), 1694–1696. https://doi.org/10.1007/s10854-011-0347-4
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