Development of high-yield layer transfer process of single-crystalline silicon thin films on plastic substrate and its application to multi-functional device integration

Abstract

We attempted hydrophilization of a polyethylene terephthalate (PET) substrate surface with oxygen plasma to enhance the meniscus force, and the transfer yield of SOI islands to the PET substrate was improved to 99.97% (16376/16380s). In addition, we succeeded in the fabrication and operation of a floating-gate memory on a PET substrate below 130 °C. When the gate voltage was swept, clear clockwise hysteresis was observed. The memory window increased from 0.1 V to 1.7 V with an increasing sweep range of gate voltage from 2 V to 6 V. Also, we succeeded in the integration of single-crystalline silicon (c-Si) CMOS circuits and perovskite solar cell (PSC) modules. A c-Si CMOS ring oscillator was driven by the photovoltaics of a PSC module and the oscillation frequency was 8.9 MHz under illumination of 50000 lx.