Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

Abstract

In this work, effect of uniaxial stress is studied by wafer bending on p/n -channel candidates for III-V based complimentary logic. p-GaSb has 2× higher piezoresistance (π ) coefficient than p -In0.53 Ga0.47 As, which combined with high hole-mobility in GaSb makes it an attractive candidate for III-V p -metal-oxide-semiconductor-field-effect-transistor. Limitation on maximum stress introduced by wafer bending is improved when the III-V channel is grown epitaxially on silicon. 250 MPa of stress is achieved by wafer bending on III-V channel grown on silicon substrate, which is 5× higher than maximum stress achieved on III-V substrate. © 2010 American Institute of Physics.