Simulation of a CIGS Solar Cell with CIGSe 2 /MoSe 2 /Mo Rear Contact Using AFORS-HET Digital Simulation Software

Abstract

In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe2/p + -MoSe2/Mo/SLG. When the thickness of the CIGSe2 absorber is between 3.5 and 1.5 μm, the efficiency of the cell with an interfacial layer of MoSe2 remains almost constant, with an efficiency of about 24.6%, higher to that of a conventional cell which is 23.4% for a thickness of 1.5 μm of CIGSe2. To achieve the expected results, the MoSe2 layer must be very thin less than or equal to 30 nm. In addition, a Schottky barrier height greater than 0.45 eV severely affects the fill factor and the open circuit voltage of the solar cell with MoSe2 interface layer.