Lowerature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

Abstract

This technical review presents the state of the art in lowerature chemical solution deposition (CSD) processing of ferroelectric oxide thin films. To achieve the integration of multifunctional crystalline oxides with flexible and semiconductor devices is, today, crucial to meet the demands of coming electronic devices. Hence, amorphous metal-oxide-semiconductors have been recently introduced in thin-film electronics. However, their benefits are limited compared with those of ferroelectric oxides, in which intrinsic multifunctionality would make possible multiple operations in the device. However, ferroelectricity is linked to a noncentrosymmetric crystal structure that is achieved, in general, at high temperatures, over 500 °C. These temperatures exceed the thermal stability of flexible polymer substrates and are not compatible with those permitted in the current fabrication routines of Si-based devices. In addition, the manufacturing of flexible electronic devices not only calls for lowerature fabrication processes but also for deposition techniques that scale easily to the large areas required in flexible devices. In this regard, CSD processes are the best positioned today to integrate metal oxide thin films with flexible substrates as a large-area, low-cost, high-throughput fabrication technique. Here, we review the progress made in the last years in fabricating at lowerature crystalline ferroelectric oxide thin films via CSD methods, highlighting the recent work of our group in the preparation of ferroelectric oxide thin films on flexible polyimide substrates.