A model for laser induced diffusion

Abstract

A model for laser induced diffusion is proposed, assuming the melting of Si surface under pulsed laser irradiation and the diffusion, in liquid phase, of a thin film deposited impurity. Depending on the thickness of the film, it results in a dopant distribution profile with a surface disordered layer induced either by segregation effects or precipitation of the dopant in excess of the solubility limit achieved by laser annealing. Experimental results obtained for a ruby laser irradiation of thin films of various dopants such as Sb, Ga, Bi, and In deposited on Si substrates are in good agreement with the model.