On the applicability of two-bit carbon nanotube through-silicon via for power distribution networks in 3-D integrated circuits

Abstract

This study investigates the possibility of the carbon nanotube (CNT)-based through-silicon vias (TSVs) for improving power integrity of 3-D integrated circuits (3-D ICs). The circuit model is developed for 2-bit CNT TSV and validated through the full-wave electromagnetic simulator HFSS simulations. The 2-bit CNT TSV is applied to power distribution networks (PDNs) by combining the validated equivalent-circuit model and that TSV-based PDN impedance is compared with the traditional one. By virtue of the large capacitance and low inductance of the 2-bit CNT TSV, the PDN impedance of the 3-D IC can be suppressed significantly and the anti-resonant frequency can be increased.