In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C. © 2011 Pinto et al.
CITATION STYLE
Pinto, S. R. C., Rolo, A. G., Buljan, M., Chahboun, A., Bernstorff, S., Barradas, N. P., … Gomes, M. J. M. (2011). Low-temperature fabrication of layered self-organized ge clusters by RF-sputtering. Nanoscale Research Letters, 6(1). https://doi.org/10.1186/1556-276X-6-341
Mendeley helps you to discover research relevant for your work.