Applications of Ar Gas Cluster Ion Beam to Oxide Thin Films

Abstract

The electronic structure of a Ta 2 O 5 thin film on SiO 2 /Si (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the Ta 2 O 5 thin films. Ar GCIB can be useful for potential applications of oxide materials with sample rotation.