High write endurance up to 1012 cycles in a spin current-type magnetic memory array

Abstract

We demonstrated high write endurance of up to 1012 cycles with a pulse write current of 10 ns in a spin current-type (SC) single magnetic tunnel junction (MTJ) element and 8×8 memory array. Furthermore, we demonstrated an accelerated test of failure elements by increasing the write current density. According to cross-sectional TEM images of the failure MTJ elements, one of the failure models is caused only on the spin orbit torque (SOT) line by electrical-open and electrical-short conditions. We concluded that SC-MTJ will have strong write endurance against a high write current if the SOT-line is improved. SC-MTJ offers an alternative to spin transfer torque (STT)-MTJ as a high write endurance magnetic memory.