Abstract
We demonstrate InGaAs mid-infrared quantum well infrared photodetectors (MIR PV-QWIPs) that enable cost-effective mature GaAs-based detection and imaging technologies, with exceptional material uniformity, reproducibility, and yield, over a large area, with high spectral selectivity, innate polarization sensitivity, radiation hardness, high detectivity, and high speed operation at TEC temperatures without bias. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Hinds, S., Buchanan, M., Dudek, R., Haffouz, S., Laframboise, S., Wasilewski, Z., & Liu, H. C. (2011). Near-room-temperature mid-infrared quantum well photodetector. Advanced Materials, 23(46), 5536–5539. https://doi.org/10.1002/adma.201103372
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