Local oxidation fin-field-effect-transistor structure for nanodevice applications

Abstract

Local oxidation (LOCOS) fin field-effect transistors (finFETs), a type of delta-FETs, are studied here for comparison with silicon-on-insulator (SOI) finFETs and bulk silicon finFETs. In our simulation, the LOCOS finFET shows a lower leakage current than the bulk finFET and a driving capability superior to that of the SOI finFET. The results can be attributed to the partial connection between the channel region and the substrate in LOCOS finFETs. The partially isolated oxide layer of LOCOS provides electrical isolation to suppress leakage, and the interspace between isolated oxide layers provides good thermal conduction to sustain a high driving current. For device fabrication, different parameters, fin height (H), gate length (L), and oxide interspace (S), are also investigated. The results show that the LOCOS finFET structure is an exceptional alternative for nanodevice applications. © 2010 The Japan Society of Applied Physics.