Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator

14Citations
Citations of this article
11Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

Harnessing multibit precision in nonvolatile memory (NVM)-based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN). However, NVM-based synaptic cores suffer from the trade-off between bit density and performance. The undesired performance degradation with scaling, limited bit precision, and asymmetry associated with weight update poses a severe bottleneck in realizing a high-density synaptic core. Herein, 1) evaluation of novel differential mode ferroelectric field-effect transistor (DM-FeFET) bitcell on a crossbar array of 4 K devices; 2) validation of weighted sum operation on 28 nm DM-FeFET crossbar array; 3) bit density of 223Mb mm−2, which is ≈2× improvement compared to conventional FeFET array; 4) 196 TOPS/W energy efficiency for VGG-8 network; and 5) superior bit error rate (BER) resilience showing ≈94% training and 88% inference accuracy with 1% BER are demonstrated.

Cite

CITATION STYLE

APA

Parmar, V., Müller, F., Hsuen, J. H., Kingra, S. K., Laleni, N., Raffel, Y., … Kämpfe, T. (2023). Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator. Advanced Intelligent Systems, 5(6). https://doi.org/10.1002/aisy.202200389

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free