Magnetism in ZnO films with Mn and Co due to hydrogen plasma irradiation

Abstract

High quality ZnO and magnetic element doped (Zn, Mn)O and (Zn, Co)O films were made by using a pulsed laser deposition (PLD) system. The results of X-ray diffraction measurements showed a single crystal of wurtzite structure. The ZnMnO film had electrical properties of an n-type semiconductor with carrier concentration of 5×1018 cm-3, while the ZnCoO films showed high conductance. From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as Ec-0.62 eV and Ec-0.13 eV, respectively. © 2009 American Institute of Physics.