Abstract
The photoelectrochemical properties of Inx Ga1-x NGaN (0≤x≤0.20) epitaxial films on sapphire (0001) substrates have been investigated. The flatband potential of Inx Ga1-x N is shifted to more positive voltages with increasing indium incorporation. In aqueous HBr solution, the turnover number of the In0.20 Ga0.80 N electrode reaches 847 after 4000 s illumination, which suggests that In0.20 Ga0.80 N has good photostability. Moreover, In0.20 Ga0.80 N shows highest visible-light response among Inx Ga1-x N (0≤x≤0.20) and the incident photon conversion efficiency is about 9% at 400-430 nm in the HBr solution. © 2008 American Institute of Physics.
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CITATION STYLE
Luo, W., Liu, B., Li, Z., Xie, Z., Chen, D., Zou, Z., & Zhang, R. (2008). Stable response to visible light of InGaN photoelectrodes. Applied Physics Letters, 92(26). https://doi.org/10.1063/1.2955828
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