Fabrication of amorphous silicon carbide films from decomposition of tetramethylsilane using ECR plasma of Ar

Abstract

Mechanically-hard hydrogenated amorphous silicon carbide (a-SiC x:H) films were formed from the decomposition of Si(CH 3)4 using the electron-cyclotron resonance plasma flow of Ar. An external radio-frequency (RF) voltage was applied to the substrate with the negative self-bias voltage (-VRF) of 0-100 V. Compositional analysis was made with a combination of Rutherford backscattering and elastic recoil detection analysis. The C/Si ratios of films were 2.2-2.7. Film hardness was measured with a nano-indentation testing equipment. Chemical bonding was analyzed using carbon-K near edge X-ray absorption fine structure (C-K NEXAFS) spectroscopy using an accelerator NewSUBARU. The peak-fitting analysis of the C-K NEXAFS spectra yielded the sp2/(sp2+sp3) ratios, being fully correlated with film hardness. With supported by the IR and Raman spectroscopic measurements, the change of the chemical structure induced by -VRF was discussed.