Hall mobility maps for 4H-Silicon Carbide by Monte Carlo Simulations

Abstract

The Monte Carlo Single Particle approach was used to analyze electron transport in 4H-SiC taking into account the influence of the magnetic field. Within the numerical approach it was possible to evaluate electron Hall mobility and the Hall factor for the wide range of donor concentrations and temperatures varying from 300 K up to 700 K. © Published under licence by IOP Publishing Ltd.