The Recently established ion cut technology enables accurate fabrication of silicon-on-insulator (SOI) waters and has found some other significant applications. We study fracture mechanics of the technology when directly cutting a wafer into a desired surface morphology. First, we describe integral transform-based methods for calculating the stress intensity factors of subsurface cracks embedded in a semiinfinite solid. Because the crack and the ftee surface interact, the crack tip fields are generally of I-II mixed mode. We derive solutions for plane-strain or axisymmetrical configurations. We then analyze the suggested three-dimensional ion cut method using the fracture criterion for kinking propagation of a mixed-mode crack. To illustrate the approach, we consider circular hole and straight groove surface patterns.
CITATION STYLE
Feng, X. Q., Xu, M., Wang, X., & Gu, B. (2007). Fracture mechanics analysis of three-dimensional ion cut technology. Journal of Mechanics of Materials and Structures, 2(9), 1831–1852. https://doi.org/10.2140/jomms.2007.2.1831
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