Electrical performance of local bottom-gated MoS2 thin-film transistors

Abstract

This paper reports the unique electronic properties of the local bottom-gated MoS2 thin-film transistors (TFTs) fabricated on glass substrates. The current–voltage (I–V) characteristics of field effect transistors exhibited the on/off ratio of ∼1×106 and mobility higher than 20 cm2 V−1 s−1. The doping concentration of MoS2 flakes extracted by capacitance–voltage (C–V) measurement is approximately 1016–1017 cm−3. These results demonstrate that the electrical performance of the local bottom-gated TFTs are comparable with the conventional TFTs, providing important technical implications on the feasibility of MoS2 TFTs.