Abstract
The scattering rates for the electron-impurity and the electron-phonon interactions in semiconductor multilayer heterojunction structures are calculated. It is found that phonon scattering is enhanced in such structures, whereas, impurity scattering can be strongly reduced at low temperatures as found experimentally.
Cite
CITATION STYLE
APA
Hess, K. (1979). Impurity and phonon scattering in layered structures. Applied Physics Letters, 35(7), 484–486. https://doi.org/10.1063/1.91205
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