Impurity and phonon scattering in layered structures

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Abstract

The scattering rates for the electron-impurity and the electron-phonon interactions in semiconductor multilayer heterojunction structures are calculated. It is found that phonon scattering is enhanced in such structures, whereas, impurity scattering can be strongly reduced at low temperatures as found experimentally.

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APA

Hess, K. (1979). Impurity and phonon scattering in layered structures. Applied Physics Letters, 35(7), 484–486. https://doi.org/10.1063/1.91205

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