Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position

Abstract

To investigate the impact of only the dopant position on threshold voltage (V th) in nanoscale field-effect transistors, we fabricated transistors with ordered dopant arrays and conventional random channel doping. Electrical measurements revealed that device performance could be enhanced by controlling the dopant position alone, despite varying dopant number according to a Poisson distribution. Furthermore, device-to-device fluctuations in V th could be suppressed by implanting a heavier ion such as arsenic owing to the reduction of the projected ion struggling. The results of our study highlight potential improvements in device performance by controlling individual dopant positions. © 2012 American Institute of Physics.