Analysis of dual metal gate engineered SiGe/Si TFET based Biosensor: A dielectric modulation approach

Abstract

In this article, a highly sensitive and efficient label free biosensor based on dielectric modulation has been evaluated by considering the extended gate engineering mechanism along with the SiGe/Si heterostructure (H) tunnel (T) FET architecture. Moreover, the 2D simulations have been executed using SILVACO ATLAS TCAD tool. Besides, the proposed HTFET provides stability to the immobilized biomolecules within the sensing cavity because of the extended gate at the source/channel interface. The proposed SiGe/Si HTFET device shows impressive performance in terms of sensitivity against the variation of different neutral, positively and negatively charged biomolecules. Our results depict that the proposed device is capable of providing an On Current Sensitivity (SION) of 7.5 x 109 for k = 12. Therefore, the DM-GE-HTFET (Dual Metal Gate Engineered HTFET) can be used as an alternative to the conventional TFET based biosensors.