Patterning two-dimensional chalcogenide crystals of Bi 2 Se 3 and in 2 Se 3 and efficient photodetectors

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Abstract

Patterning of high-quality two-dimensional chalcogenide crystals with unique planar structures and various fascinating electronic properties offers great potential for batch fabrication and integration of electronic and optoelectronic devices. However, it remains a challenge that requires accurate control of the crystallization, thickness, position, orientation and layout. Here we develop a method that combines microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal two-dimensional chalcogenides onto transparent insulating mica substrates. Using this approach, we have patterned large-area arrays of two-dimensional single-crystal Bi2Se3 topological insulator with a record high Hall mobility of ∼1,750 cm2V-1 s-1 at room temperature. Furthermore, our patterned two-dimensional In2Se3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of ∼1,650AW-1 at 633 nm. The facile patterning, integration and packaging of high-quality two-dimensional chalcogenide crystals hold promise for innovations of next-generation photodetector arrays, wearable electronics and integrated optoelectronic circuits.

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Zheng, W., Xie, T., Zhou, Y., Chen, Y. L., Jiang, W., Zhao, S., … Peng, H. (2015). Patterning two-dimensional chalcogenide crystals of Bi 2 Se 3 and in 2 Se 3 and efficient photodetectors. Nature Communications , 6. https://doi.org/10.1038/ncomms7972

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