Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways

Abstract

Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure-engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra-high density and high electron mobility. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.