Electrical and ultraviolet photoresponse properties of quasialigned ZnO nanowires/ p-Si heterojunction

Abstract

The authors report on the electrical and ultraviolet (UV) photoresponse properties of quasialigned ZnO nanowires (NWs) p-Si heterojunction grown by a low-temperature solvothermal technique. The current-voltage characteristic of a single ZnO NWp-Si junction measured by a scanning tunneling microscope shows a rectifying behavior with a rectification ratio IF IR of 33 at 5 V. The current transport is dominated by the recombination-tunneling mechanism for 0.4 V