Reconfigurable dual-band power amplifier based on memristor

Abstract

This letter presents a reconfigurable dual-band power amplifier based on memristor. The memristor is first applied in the field of RF power amplifier design. Based on the basic theory of memristor, different values of the resistance of the memristor are obtained by adding different dc voltages on the memristor, and conversion between different output matching circuits is realized. Thus, a reconfigurable output matching circuit is constructed to realize a reconfigurable dual-band power amplifier. To verify the effectiveness of the proposed method, a reconfigurable dual-band power amplifier is designed and simulated. The simulation results show that by setting different dc voltages of the memristor, the saturated output power of 41 dBm and drain efficiency of more than 70% can be achieved at two frequency points of 2.0 GHz and 3.0 GHz, and the gain can reach 10 dB.