Design and electrical characterization of Au/Anthracene/p-Si/Al organic/inorganic heterojunction

Abstract

Hybrid organic/inorganic heterojunction of nanocrystalline Anthracene and p-Si was fabricated by using a conventional thermal evaporation technique. The crystal and molecular structure of the Anthracene thin films were analyzed by means of X-ray diffraction (XRD), and Fourier Transformation-Infra Red (FT-IR) spectroscopy. The morphologies of the Anthracene/p-Si were investigated by scanning electron microscopy (SEM). The dark current-voltage (I-V) characteristics of Au/Anthracene/p-Si/Al heterojunction were investigated at room temperature (293 K). The calculated series resistance and the shunt resistance of the device were found to be 440 Ω and 1.47 MΩ, respectively. The Cheung-Cheung and Norde's models were used to investigate and determine the heterojunction parameters. The ideality factor and barrier height values of the Au/Anthracene/p-Si/Al diode were obtained to be 1.1 and 0.464 eV, respectively. The dependence of capacitance-voltage (C-2-V) for the device Anthracene/p-Si was found to be almost linear. Essential junction parameters and performance of heterojunction established a photovoltaic behavior with an open circuit voltage (Voc) 0.382 V, short circuit photocurrent (ISC) 0.72 mA and power conversion efficiency (η) of 4.65%.