High frequency de Haas-van Alphen oscillations and the Fermi surface in indium

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Abstract

De Haas-van Alphen oscillations from the second zone and the third zone Fermi surface in indium have been studied. Emphasis is placed on the high frequency oscillations attributed to the second zone, which show a strong mixing with the medium frequency oscillations from the third zone. The results combined with the low frequency oscillations from the third zone surface measured by Hughes and Shepherd (1969) have been used to obtain the parameters on an empirical pseudopotential calculation. The parameters in eV are: V 111=-0.601, V002=-0.435, V200=0.167 and E F=8.702.

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Van Weeren, J. H. P., & Anderson, J. R. (1973). High frequency de Haas-van Alphen oscillations and the Fermi surface in indium. Journal of Physics F: Metal Physics, 3(12), 2109–2119. https://doi.org/10.1088/0305-4608/3/12/012

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