Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

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Abstract

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface. © 2013 American Physical Society.

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Rault, J. E., Agnus, G., Maroutian, T., Pillard, V., Lecoeur, P., Niu, G., … Barrett, N. (2013). Interface electronic structure in a metal/ferroelectric heterostructure under applied bias. Physical Review B - Condensed Matter and Materials Physics, 87(15). https://doi.org/10.1103/PhysRevB.87.155146

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